The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jan. 22, 2007
Haoren Zhuang, Hopewell Junction, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Jingyu Lian, Hopewell Junction, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Jingyu Lian, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for manufacturing a semiconductor device is disclosed including determining a dimension or other physical characteristic of a pattern in a layer of material that is disposed on a workpiece, and etching the layer of material using information that is related to the dimension. A system is also disclosed for manufacturing a semiconductor device including a first etch system configured to etch a layer to define a pattern in the layer, and a second etch system configured to measure a physical characteristic of the pattern, determine an etch control parameter based on the physical characteristic, and etch the layer in accordance with the etch control parameter.