The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2010

Filed:

Apr. 06, 2007
Applicants:

David Ishikawa, Mountain View, CA (US);

Craig R. Metzner, Fremont, CA (US);

Ali Zojaji, Santa Clara, CA (US);

Yihwan Kim, Milpitas, CA (US);

Arkadii V. Samoilov, Saratoga, CA (US);

Inventors:

David Ishikawa, Mountain View, CA (US);

Craig R. Metzner, Fremont, CA (US);

Ali Zojaji, Santa Clara, CA (US);

Yihwan Kim, Milpitas, CA (US);

Arkadii V. Samoilov, Saratoga, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C30B 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.


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