The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

Nov. 03, 2005
Applicants:

Isamu Asano, Tokyo, JP;

Tyler A. Lowrey, Rochester Hills, MI (US);

Inventors:

Isamu Asano, Tokyo, JP;

Tyler A. Lowrey, Rochester Hills, MI (US);

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory element comprising a bottom electrode, a top electrodeprovided on the bottom electrode, and a recording layercontaining phase change material connected between the bottom electrodeand the top electrode. In accordance with this invention, the top electrodeis in contact with a growth initiation surface 18of the recording layer. This structure can be obtained by forming the top electrodebefore the recording layer, resulting in a three-dimensional structure. This decreases heat dissipation to the bit line without increasing the thickness of the recording layer


Find Patent Forward Citations

Asano, Isamu. (2010). Electrically rewritable non-volatile memory element and method of manufacturing the same (U.S. Patent No. 7671356). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7671356

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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