The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Jun. 08, 2005
Harbans Singh Sachdev, Hopewell Junction, NY (US);
Howard Shillingford, Poughkeepsie, NY (US);
Garkay Joseph Leung, Wappingers Falls, NY (US);
Mary Matera-longo, Modena, NY (US);
John Rapp, Poughkeepsie, NY (US);
Harbans Singh Sachdev, Hopewell Junction, NY (US);
Howard Shillingford, Poughkeepsie, NY (US);
Garkay Joseph Leung, Wappingers Falls, NY (US);
Mary Matera-Longo, Modena, NY (US);
John Rapp, Poughkeepsie, NY (US);
NXP B.V., Eindhoven, NL;
Abstract
The present invention relates to a process that minimizes the cracking of low-k dielectric polymers. In an example embodiment, on a semiconductor substrate (200), there is a method of forming a composite dielectric disposed on a metal layer passivated with plasma deposited silicon oxide SiOx. The method comprises depositing a first layer of a first predetermined thickness of a spin-on dielectric on the metal layer protected with a plasma deposited silicon oxide SiO. Next a thin stress relief layer of a second predetermined thickness is disposed on the first layer of spin-on-dielectric. Upon the thin stress-relief layer, a second layer of a third predetermined thickness of spin-on dielectric is deposited. Low-k spin-on dielectrics may include hydrogen silsequioxane (HSQ) and methyl silsequioxane (MSQ).