The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Aug. 04, 2008
Thomas B. Richardson, Killingworth, CT (US);
Yun Zhang, Warren, NJ (US);
Chen Wang, New Haven, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Cai Wang, Milford, CT (US);
Xuan Lin, Northford, CT (US);
Richard Hurtubise, Clinton, CT (US);
Joseph A. Abys, Warren, NJ (US);
Thomas B. Richardson, Killingworth, CT (US);
Yun Zhang, Warren, NJ (US);
Chen Wang, New Haven, CT (US);
Vincent Paneccasio, Jr., Madison, CT (US);
Cai Wang, Milford, CT (US);
Xuan Lin, Northford, CT (US);
Richard Hurtubise, Clinton, CT (US);
Joseph A. Abys, Warren, NJ (US);
Enthone Inc., West Haven, CT (US);
Abstract
A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.