The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2010

Filed:

Jul. 26, 2006
Applicants:

Badih El-kareh, Cedar Park, TX (US);

Hiroshi Yasuda, Munich, DE;

Scott Gerard Balster, Dallas, TX (US);

Philipp Steinmann, Unterschleissheim, DE;

Joe R. Trogolo, Plano, TX (US);

Inventors:

Badih El-Kareh, Cedar Park, TX (US);

Hiroshi Yasuda, Munich, DE;

Scott Gerard Balster, Dallas, TX (US);

Philipp Steinmann, Unterschleissheim, DE;

Joe R. Trogolo, Plano, TX (US);

Assignees:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 21/337 (2006.01);
U.S. Cl.
CPC ...
Abstract

An junction field effect transistor (JFET) is fashioned with a patterned layer of silicide block (SBLK) material utilized in forming gate, source and drain regions. Utilizing the silicide block in this manner helps to reduce low-frequency (flicker) noise associated with the JFET by suppressing the impact of surface states, among other things.


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