The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Jul. 10, 2008
Hiroyuki Enomoto, Musashino, JP;
Taro Asai, Hamura, JP;
Shuntaro Machida, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method for improving productivity when manufacturing a semiconductor device. A lower electrode, insulating films, an upper electrode and insulating films are formed on a semiconductor substrate in a sensor region. A cavity is formed between the insulator films above the lower electrode. The lower electrode, insulating film, the cavity and insulating film, and an upper electrode form a variable capacity sensor. The cavity is formed by etching a sacrificial pattern between the insulation films by way of a hole formed in a pair of insulation films. Other than in the above sensor region, a dummy lower electrode and four insulating films are formed on the TEG region on the semiconductor substrate; and a dummy cavity is formed between a pair of insulation films above the lower electrode however no conductive layer on the same layer as the upper electrode is formed on the dummy cavity.