The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 03, 2007
Yi-wei Chen, Taichung County, TW;
Bao-tzeng Huang, Pingtung County, TW;
An-chi Liu, Tainan, TW;
Chao-ching Hsieh, Hsinchu County, TW;
Nien-ting Ho, Tainan, TW;
Kuo-chih Lai, Tainan, TW;
Yi-Wei Chen, Taichung County, TW;
Bao-Tzeng Huang, Pingtung County, TW;
An-Chi Liu, Tainan, TW;
Chao-Ching Hsieh, Hsinchu County, TW;
Nien-Ting Ho, Tainan, TW;
Kuo-Chih Lai, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed.