The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jan. 12, 2007
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Junwei Bao, Palo Alto, CA (US);
Manuel Madriaga, San Jose, CA (US);
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Junwei Bao, Palo Alto, CA (US);
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A process step in fabricating a structure on a wafer in a wafer application having one or more process steps and one or more process parameters is controlled by determining a correlation between a set of profile models and one or more key profile shape variables. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. One profile model is selected from the set of profile models based on the correlation and a value of at least one key profile shape variable of the process of the wafer application to be used in fabricating the structure. The structure is fabricated in a first fabrication process cluster using the process step and the value of the at least one key profile shape variable. A measured diffraction signal is obtained off the structure. One or more profile parameters of the structure are determined based on the measured diffraction signal and the selected profile model. The one or more determined profile parameters are transmitted to the first fabrication process cluster or a second fabrication process cluster.