The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jul. 15, 2005
Tadahiro Ohmi, Miyagi, JP;
Koji Kotani, Miyagi, JP;
Kazuyuki Maruo, Tokyo, JP;
Takahiro Yamaguchi, Tokyo, JP;
Tadahiro Ohmi, Miyagi, JP;
Koji Kotani, Miyagi, JP;
Kazuyuki Maruo, Tokyo, JP;
Takahiro Yamaguchi, Tokyo, JP;
Advantest Corporation, Tokyo, JP;
National University Corporation Tohoku University, Miyagi, JP;
Abstract
There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.