The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2010

Filed:

Jun. 15, 2008
Applicants:

Wei-ming Liao, Taipei, TW;

Jer-chyi Wang, Taoyuan County, TW;

Inventors:

Wei-Ming Liao, Taipei, TW;

Jer-Chyi Wang, Taoyuan County, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory structure includes: a substrate; a control gate positioned on the substrate; floating gates positioned at two sides of the control gate, wherein the floating gates have a U-shaped bottom embedded in the substrate; a first dielectric layer positioned between the control gate and the substrate; a second dielectric layer positioned between the U-shaped bottom of the floating gates and the substrate; a third dielectric layer positioned between the control gate and the floating gates; a local doping region positioned around the floating gates channel; and a source/drain doping region positioned in the substrate at a side of the floating gates.


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