The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jun. 14, 2006
Kan Yasui, Kodaira, JP;
Digh Hisamoto, Kokubunji, JP;
Tetsuya Ishimaru, Kokubunji, JP;
Shin-ichiro Kimura, Kunitachi, JP;
Kan Yasui, Kodaira, JP;
Digh Hisamoto, Kokubunji, JP;
Tetsuya Ishimaru, Kokubunji, JP;
Shin-Ichiro Kimura, Kunitachi, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A method of manufacturing a non-volatile semiconductor memory device is provided which overcomes a problem of penetration of implanted ions due to the difference of an optimal gate height in simultaneous formation of a self-align split gate type memory cell utilizing a side wall structure and a scaled MOS transistor. A select gate electrode to form a side wall in a memory area is formed to be higher than that of the gate electrode in a logic area so that the height of the side wall gate electrode of the self-align split gate memory cell is greater than that of the gate electrode in the logic area. Height reduction for the gate electrode is performed in the logic area before gate electrode formation.