The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jul. 11, 2006
Applicants:
Jiong-ping LU, Richardson, TX (US);
Jiejie Xu, Plano, TX (US);
Inventors:
Jiong-Ping Lu, Richardson, TX (US);
Jiejie Xu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
An embodiment of the invention is a method of making a transistor by performing an ion implant on a gate electrode layer. The method may include forming an interface layerover the semiconductor substrateand performing an anneal to create a silicideon the top surface of the gate electrode