The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Apr. 10, 2008
John J. Pekarik, Underhill, VT (US);
Xudong Wang, Groton, MA (US);
John J. Pekarik, Underhill, VT (US);
Xudong Wang, Groton, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a current mirror device for an integrated circuit includes configuring a reference current source; forming a first field effect transistor (FET) in series with the reference current source, the first FET of a first conductivity type formed on a first portion of a substrate having a first crystal lattice orientation; and forming a second FET of the first conductivity type on a second portion of the substrate having a second crystal lattice orientation, with a gate terminal of the first FET coupled to a gate terminal of the second FET, and the gate terminals of the first and second FETs coupled to the reference current source; wherein the carrier mobility of the first FET formed on the first portion of the substrate is different than the carrier mobility of the second FET formed on the second portion of the substrate.