The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2010
Filed:
Jun. 10, 2004
Mark Henderson, Pasco, WA (US);
John Vavruska, Santa Fe, NM (US);
Andreas Blutke, Richland, WA (US);
Robert Ferguson, Richland, WA (US);
Mark Henderson, Pasco, WA (US);
John Vavruska, Santa Fe, NM (US);
Andreas Blutke, Richland, WA (US);
Robert Ferguson, Richland, WA (US);
Plasmet Corporation, Walla Walla, WA (US);
Abstract
High-power inductively coupled plasma technology is used for thermal cracking and vaporization of continuously fed carbonaceous materials into elemental carbon, for reaction with separate and continuously fed metal catalysts inside a gas-phase high-temperature reactor system operating at or slightly below atmospheric pressures. In one particularly preferred embodiment, in-flight growth of carbon nanomaterials is initiated, continued, and controlled at high flow rates, enabling continuous collection and product removal via gas/solid filtration and separation methods, and/or liquid spray filtration and solid collection methods suitable for producing industrial-scale production quantities. In another embodiment, the reaction chamber and/or filtration/separation media include non-catalytic or catalytic metals to simultaneously or separately induce on-substrate synthesis and growth of carbon nanomaterials. The on-substrate grown carbon nanomaterials are produced in secondary chambers that are selectively isolated for periodic removal of the product.