The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Oct. 22, 2008
Gerard T. Luc-pat, Sunnyvale, CA (US);
Raghava V. Kondepudy, San Jose, CA (US);
Gerard T. Luc-Pat, Sunnyvale, CA (US);
Raghava V. Kondepudy, San Jose, CA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
To provide fast mask defect scoring, approximated wafer simulations (e.g. using one convolution) are performed on the defect inspection image and its corresponding reference inspection image. Using the approximated defect wafer image and the approximated reference wafer image generated by these approximated wafer simulations, a defect maximum intensity difference (MID) is computed by subtracting one approximated wafer image from the other approximated wafer image to generate a difference image. After a defect region of the difference image is clearly defined, a simulation at the centroid (i.e. a single point) of the defect region is performed. After the defect MID is computed (represented by an intensity) it can be compared to a prototype MID, which can represent a generic nuisance defect.