The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Oct. 03, 2008
Genmao Chen, Toronto, CA (US);
Jiang Peng, Suzhou, CN;
Genmao Chen, Toronto, CA (US);
Jiang Peng, Suzhou, CN;
CSI Cells Co. Ltd., Suzhou, CN;
Abstract
A method for detection and analysis of impurity content of refined metallurgical silicon includes: (1) select the measuring points on the crystal rods or crystal ingots along the crystallization direction, measuring the resistivity at each measuring point and acquire the measured value of resistivity according to the distribution of crystallized fraction; (2) get the estimated value of the content of boron and phosphorus at each measuring point and calculate the estimated net redundant carrier concentration and the measured value of resistivity; (3) compare the estimated value of net redundant carrier concentration with that of the measured value, and adjust the estimated value of impurity content in the silicon material to get the new estimated net redundant carrier concentration, and use regression analysis to determine the impurity content distribution of boron and phosphorus; (4) get the average impurity content of boron and phosphorus in the silicon material according to the distribution status of impurity based on all the measuring points. This invention can detect the impurity contents of boron and phosphorus in refined metallurgical silicon, while the operation is simple, low-cost and suitable for industrial applications.