The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Apr. 20, 2006
Kuniko Kikuta, Kawasaki, JP;
Masayuki Furumiya, Kawasaki, JP;
Ryota Yamamoto, Kawasaki, JP;
Makoto Nakayama, Kawasaki, JP;
Kuniko Kikuta, Kawasaki, JP;
Masayuki Furumiya, Kawasaki, JP;
Ryota Yamamoto, Kawasaki, JP;
Makoto Nakayama, Kawasaki, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device includes a capacitor with an MIM structure, by which the dimensional accuracy of the device is improved, and a stable capacitance value is given. The semiconductor deviceincludes: a semiconductor substrate; a capacitor forming regionin which an MIM capacitor is formed, which has an insulating interlayerformed on the semiconductor substrate, a first electrode, and a second electrode, and the first electrodeand the second electrodeare arranged facing each other through the insulating interlayer; and a shielding regionwhich includes a plurality of shielding electrodesformed in the outer edge of the capacitor forming regionand, at the same time, set at a predetermined potential in the same layer as that of the MIM capacitor on the semiconductor substrate, and shields the capacitor forming regionfrom other regions.