The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Apr. 13, 2005
Hitoshi Ikeda, Annaka, JP;
Kingo Suzuki, Annaka, JP;
Akio Nakamura, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer sectionbased on a double heterostructure in which a first-conductivity-type cladding layer, an active layerand an second-conductivity-type cladding layer, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlGa)InP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the () surface appeared on the main surface thereof, and GaP transparent semiconductor layersstacked on the light emitting layer sectionas being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.