The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Nov. 24, 2005
Neng-kuo Chen, Hsin-Chu, TW;
Teng-chun Tsai, Hsin-Chu, TW;
Chien-chung Huang, Tai-Chung Hsien, TW;
Tsai-fu Chen, Kao-Hsiung Hsien, TW;
Wen-han Hung, Kao-Hsiung, TW;
Neng-Kuo Chen, Hsin-Chu, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
Chien-Chung Huang, Tai-Chung Hsien, TW;
Tsai-Fu Chen, Kao-Hsiung Hsien, TW;
Wen-Han Hung, Kao-Hsiung, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.