The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
May. 11, 2006
Yusaku Kashiwagi, Amagasaki, JP;
Yasuhiro Oshima, Amagasaki, JP;
Yoshihisa Kagawa, Yokohama, JP;
Gishi Chung, Nirasaki, JP;
Yusaku Kashiwagi, Amagasaki, JP;
Yasuhiro Oshima, Amagasaki, JP;
Yoshihisa Kagawa, Yokohama, JP;
Gishi Chung, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.