The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Nov. 07, 2007
Hironobu Miya, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Masanori Sakai, Takaoka, JP;
Shinya Sasaki, Toyama, JP;
Hirohisa Yamazaki, Toyama, JP;
Hironobu Miya, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Masanori Sakai, Takaoka, JP;
Shinya Sasaki, Toyama, JP;
Hirohisa Yamazaki, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.