The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Mar. 15, 2006
Dirk Manger, Dresden, DE;
Hocine Boubekeur, Dresden, DE;
Martin Verhoeven, Radebeul, DE;
Nicolas Nagel, Dresden, DE;
Thomas Tatry, Dresden, DE;
Dirk Caspary, Dresden, DE;
Matthias Markert, Dresden, DE;
Dirk Manger, Dresden, DE;
Hocine Boubekeur, Dresden, DE;
Martin Verhoeven, Radebeul, DE;
Nicolas Nagel, Dresden, DE;
Thomas Tatry, Dresden, DE;
Dirk Caspary, Dresden, DE;
Matthias Markert, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiOand SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.