The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2010
Filed:
Oct. 11, 2005
Sug-woo Jung, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Sug-Woo Jung, Gyeonggi-do, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Jong-Ho Yun, Gyeonggi-do, KR;
Hyun-Su Kim, Gyeonggi-do, KR;
Eun-Ji Jung, Gyeonggi-do, KR;
Abstract
Methods of forming metal silicide layers in a semiconductor device are provided in which a first metal silicide layer may be formed on a substrate, where the first metal silicide layer comprises a plurality of fragments of a metal silicide that are separated by one or more gaps. A conductive material is selectively deposited into at least some of the gaps in the first metal silicide layer in order to electrically connect at least some of the plurality of fragments.