The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2010

Filed:

Feb. 09, 2006
Applicants:

Shinji Tokumaru, Futtsu, JP;

Kensuke Okazawa, Futtsu, JP;

Jirou Kondou, Futtsu, JP;

Masaki Okajima, Tokyo, JP;

Inventors:

Shinji Tokumaru, Futtsu, JP;

Kensuke Okazawa, Futtsu, JP;

Jirou Kondou, Futtsu, JP;

Masaki Okajima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); C01B 33/07 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiOand an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.


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