The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Oct. 12, 2005
Takatoshi Nagoya, Gunma, JP;
Takatoshi Nagoya, Gunma, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention is a method for producing an annealed wafer, wherein, at least, when a boat in which a semiconductor wafer is placed is inserted into a furnace tube, the boat is inserted along with introducing an inert gas into the furnace, so that entirety of the semiconductor wafer to be a product reaches a thermally uniform portion, then an insertion rate of the boat in which the semiconductor wafer is placed is decelerated and/or suspended, so that an interval between the furnace tube and the shutter is maintained for a predetermined time, and then the furnace tube is blocked in with the shutter. Thereby, there can be provided a method for producing an annealed wafer by which during the heat treatment, it can be more certainly prevented that the wafer is contaminated with conductive impurities and that thereby resistivity of the wafer is changed before and after the heat treatment.