The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Mar. 25, 2005
Shintaro Kasai, Atsugi, JP;
Toshihiko Ouchi, Sagamihara, JP;
Masatoshi Watanabe, Isehara, JP;
Mitsuru Ohtsuka, Yamato, JP;
Taihei Mukaide, Atsugi, JP;
Shintaro Kasai, Atsugi, JP;
Toshihiko Ouchi, Sagamihara, JP;
Masatoshi Watanabe, Isehara, JP;
Mitsuru Ohtsuka, Yamato, JP;
Taihei Mukaide, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A fabrication method of fabricating a structure capable of being used for generation or detection of electromagnetic radiation includes a forming step of forming a layer containing a compound semiconductor on a substrate at a substrate temperature below about 300° C., a first heating step of heating the substrate with the layer in an ambience containing arsenic, and a second heating step of heating the substrate with the layer at the substrate temperature above about 600° C. in a gas ambience incapable of chemically reacting on the compound semiconductor. Structures of the present invention capable of being used for generation or detection of electromagnetic radiation can be fabricated using the fabrication method by appropriately regulating the substrate temperature, the heating time, the gas ambience and the like in the second heating step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile