The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jan. 17, 2008
Yu-hao Hsu, Taipei Hsien, TW;
Kuo-liang Yeh, Hsinchu, TW;
Yu-Hao Hsu, Taipei Hsien, TW;
Kuo-Liang Yeh, Hsinchu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method to extract gate to source/drain and overlap capacitances is disclosed. A first capacitance of a first test key having a reference structure and a second capacitance of a second test key having a novel structure are measured. The second test key may comprise at least a gate formed on an insulation structure, at least a contact formed on the insulation structure aside, and a metal layer formed on the contact. Another embodiment of the second test key may comprise at least a gate formed on the semiconductor substrate, a contact formed aside, and a metal layer formed on the contact. Further another embodiment uses a test key comprising at least an elongated gate and an elongated doping region aside, and only one or a few contacts are formed on an end portion of the elongated doping region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile