The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jan. 14, 2008
Neng-kuo Chen, Hsin-Chu, TW;
Teng-chun Tsai, Hsin-Chu, TW;
Chien-chung Huang, Tai-Chung Hsien, TW;
Tsai-fu Chen, Kao-Hsiung Hsien, TW;
Wen-han Hung, Kao-Hsiung, TW;
Neng-Kuo Chen, Hsin-Chu, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
Chien-Chung Huang, Tai-Chung Hsien, TW;
Tsai-Fu Chen, Kao-Hsiung Hsien, TW;
Wen-Han Hung, Kao-Hsiung, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A metal-oxide-semiconductor (MOS) transistor device is disclosed. The MOS transistor device comprises a semiconductor substrate; a gate structure on the semiconductor substrate; source/drain regions on the semiconductor substrate adjacent to the gate structure; an ultra-high tensile-stressed nitride film having a hydrogen concentration of less than 1E22 atoms/cmcovering the gate structure and the source/drain regions; and an inter-layer dielectric (ILD) film over the ultra-high tensile-stressed nitride film.