The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Feb. 06, 2006
Applicants:
Wickramanayaka Sunil, Tokyo, JP;
Motomu Kosuda, Tokyo, JP;
Naoki Yamada, Tokyo, JP;
Naomu Kitano, Tokyo, JP;
Inventors:
Wickramanayaka Sunil, Tokyo, JP;
Motomu Kosuda, Tokyo, JP;
Naoki Yamada, Tokyo, JP;
Naomu Kitano, Tokyo, JP;
Assignee:
Canon Anelva Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.