The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
Jan. 17, 2005
Satoshi Eguchi, Tokyo, JP;
Akira Kanai, Tokyo, JP;
Isao Miyashita, Tokyo, JP;
Seigo Nagashima, Tokyo, JP;
Satoshi Eguchi, Tokyo, JP;
Akira Kanai, Tokyo, JP;
Isao Miyashita, Tokyo, JP;
Seigo Nagashima, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
SiHCHhaving the concentration of 1 to 10% is diluted with Hand a portion of the diluted SiHCH, GeHand SiH(or DCS) are respectively supplied to a chamber of an epitaxial device at predetermined flow rates, and SiGe:C is formed by an epitaxial growth technique. By diluting the SiHCH, the concentration of oxygen-based impurity contained in the SiHCHis reduced and hence, the oxygen-based impurity which is supplied to a chamber are reduced whereby the concentration of oxygen-based impurity contained in the SiGe:C formed in a film is reduced.