The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
May. 08, 2007
Fukashi Morishita, Tokyo, JP;
Kazutami Arimoto, Tokyo, JP;
Fukashi Morishita, Tokyo, JP;
Kazutami Arimoto, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
When data '1' is stored in a memory cell, a bit line is driven to an H level (control line drive potential) and the other bit line is driven to an L level (reference potential) when a sense operation is completed. When a verify write operation is initiated, a charge line is driven from an H level (power supply potential) to an L level (reference potential). By the GIDL current from a source line, accumulation of holes is initiated again for a storage node subsequent to discharge of holes, whereby the potential of the storage node rises towards an H level (period α). When the charge line is driven to an H level from an L level, the potential of the storage node further rises (period β).