The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Sep. 14, 2006
Tomoya Kawagoe, Tokyo, JP;
Jun Otani, Tokyo, JP;
Hideto Hidaka, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.