The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Aug. 11, 2005
Hiroki Maehara, Tokyo, JP;
Tomoaki Osada, Tokyo, JP;
Mihoko Doi, Tokyo, JP;
Koji Tsunekawa, Tokyo, JP;
Naoki Watanabe, Tokyo, JP;
Hiroki Maehara, Tokyo, JP;
Tomoaki Osada, Tokyo, JP;
Mihoko Doi, Tokyo, JP;
Koji Tsunekawa, Tokyo, JP;
Naoki Watanabe, Tokyo, JP;
Canon Anelva Corporation, Tokyo, JP;
Abstract
A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.