The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Feb. 20, 2008
Lee Lisheng Huang, Palo Alto, CA (US);
Simon John Field, Los Gatos, CA (US);
Lee Lisheng Huang, Palo Alto, CA (US);
Simon John Field, Los Gatos, CA (US);
Necsel Intellectual Property, Inc., Santa Clara, CA (US);
Abstract
Devices and methods are disclosed for realizing a high quality bulk domain grating structure utilizing mobile charges that are generated by means of photo-excitation in a substrate. An effect of light exposure (UV, visible, or a combination of wavelengths) is to generate photo-induced charges. The application of a voltage across the substrate combined with the application of light exposure causes a photo-induced current to flow through the substrate. The photo-induced charges (behaving like virtual electrode inside the material) and the photo-induced current result in both reduction of the coercive field required for domain inversion in the material and improve realization of the domain inversion pattern, which previously has not been possible at room temperature.