The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Sep. 29, 2006
Atsuo Isobe, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hiroshi Shibata, Higashine, JP;
Chiho Kokubo, Atsugi, JP;
Tatsuya Arao, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Hidekazu Miyairi, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Mai Akiba, Atsugi, JP;
Atsuo Isobe, Atsugi, JP;
Koji Dairiki, Atsugi, JP;
Hiroshi Shibata, Higashine, JP;
Chiho Kokubo, Atsugi, JP;
Tatsuya Arao, Atsugi, JP;
Masahiko Hayakawa, Atsugi, JP;
Hidekazu Miyairi, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Koichiro Tanaka, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Mai Akiba, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.