The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Aug. 31, 2007
Ken Takahashi, Mito, JP;
Taichiroo Konno, Hitachi, JP;
Masahiro Arai, Hitachi, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Abstract
On a GaAs substrate, a light emitting part, an intermediate layerof AlGaInP and a current spreading layerare sequentially formed. The light emitting partincludes a first conductivity type AlGaInP based lower cladding layer, an AlGaInP based light emitting layer, and a second conductivity type AlGaInP based upper cladding layersequentially formed on the GaAs substrate. In each layer of the light emitting part, a hydrogen concentration is not more than 2×10cm, a carbon concentration is not more than 2×10cm, and an oxygen concentration is not more than 2×10cm. In a partial region or in a total region of the current-spreading layer, a hydrogen concentration is not more than 5×10cm, a carbon concentration is not more than 5×10cm, and an oxygen concentration is not more than 2×10cm.