The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Aug. 30, 2007
Applicant:
Tatsushi Ueda, Toyama, JP;
Inventor:
Tatsushi Ueda, Toyama, JP;
Assignee:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide a manufacturing method of a semiconductor device for forming a diffusion layer by diffusing phosphorus atoms on a surface of a silicon substrate on which resist is applied, including the step of forming a diffusion layer, with a temperature of the silicon substrate maintained lower than a deterioration temperature of the resist.