The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2010
Filed:
Mar. 15, 2006
Ping-wei Lin, Hsinchu, TW;
Chin-chia Wu, Yuanlin Township, Changhua County, TW;
Chao-sheng Chiang, Hsinchu, TW;
Ping-Wei Lin, Hsinchu, TW;
Chin-Chia Wu, Yuanlin Township, Changhua County, TW;
Chao-Sheng Chiang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a metal-insulator-metal capacitor is described. A first metal layer is formed on a substrate. A plasma treatment is performed on the surface of the first metal layer. Then, a first oxide layer, a nitride layer and a second oxide layer are formed in sequence over the first metal layer. Thereafter, a second metal layer is formed on the second oxide layer. The second metal layer, the second oxide layer, the nitride layer, the first oxide layer and the first metal layer are defined to form the metal-insulator-metal capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile