The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 19, 2006
Nicolaas Petrus Van Der Aa, Helmond, NL;
Arie Jeffrey Den Boef, Waalre, NL;
Robert Martinus Maria Mattheij, Helmond, NL;
Henricus Gerhardus Ter Morsche, Geldrop, NL;
Nicolaas Petrus Van Der Aa, Helmond, NL;
Arie Jeffrey Den Boef, Waalre, NL;
Robert Martinus Maria Mattheij, Helmond, NL;
Henricus Gerhardus Ter Morsche, Geldrop, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
An optical metrology system is disclosed that has a measuring system configured to irradiate a metrology mark and record a portion of a reflected, a transmitted, or both, electromagnetic field and a characterization device configured to determine from the recorded field a mark shape parameter indicative of the structure of the metrology mark, the characterization device comprising: a field calculation unit configured to calculate an expected field for reflection, transmission, or both, from a theoretical reference mark based on an algebraic eigenvalue-eigenvector representation of the expected field, a field derivative calculation unit configured to calculate a first order derivative, a higher order derivative, or both, of the expected field with respect to the mark shape parameter by first deriving analytical forms for corresponding derivatives of eigenvalues and eigenvectors of the eigenvalue-eigenvector representation, and an optimization unit configured to use the outputs from the field and field derivative calculation units to determine an optimized mark shape parameter for which the expected field substantially matches the recorded field.