The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Jul. 25, 2005
Applicants:
Naoyoshi Tamura, Kawasaki, JP;
Kazuo Kawamura, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Microelectronics Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A p-channel MOS transistor includes source and drain regions of p-type formed in a silicon substrate at respective lateral sides of a gate electrode wherein each of the source and drain regions of p-type includes any of a metal film region and a metal compound film region as a compressive stress source accumulating therein a compressive stress.
Quick Actions:
Tamura, Naoyoshi. (2010). P-channel mos transistor, semiconductor integrated circuit device and fabrication process thereof (U.S. Patent No. 7649232). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7649232
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile