The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 14, 2006
Chih-hsiung Chang, Taichung County, TW;
Chien-shen Weng, Hsinchu County, TW;
Chieh-chou Hsu, Kaohsiung, TW;
Chia-tien Peng, Hsinchu County, TW;
Jhen-yue LI, Taichung, TW;
Chih-Hsiung Chang, Taichung County, TW;
Chien-Shen Weng, Hsinchu County, TW;
Chieh-Chou Hsu, Kaohsiung, TW;
Chia-Tien Peng, Hsinchu County, TW;
Jhen-Yue Li, Taichung, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.