The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
May. 10, 2001
Franz Laermer, Weil der Stadt, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Franz Laermer, Weil der Stadt, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first high-frequency electromagnetic alternating field, a first plasma-generating area for generating a first plasma and a first gas feed, as well as a first plasma-generating device downstream from a second plasma-generating device which is inductively coupled in particular and has a second arrangement for generating a second high-frequency electromagnetic alternating field, a second plasma-generating area for generating a second plasma and a second gas feed. The substrate to be etched is arranged in the first plasma-generating device. The second plasma is suppliable to the first plasma-generating device via the first gas feed at least partially as a first reactive gas.