The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Dec. 23, 2005
Kunliang Zhang, Milpitas, CA (US);
Hui-chuan Wang, Pleasanton, CA (US);
Tong Zhao, Fremont, CA (US);
Yu-hsia Chen, Mountain View, CA (US);
Min LI, Dublin, CA (US);
Cherng-chyi Han, San Jose, CA (US);
Kunliang Zhang, Milpitas, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Tong Zhao, Fremont, CA (US);
Yu-Hsia Chen, Mountain View, CA (US);
Min Li, Dublin, CA (US);
Cherng-Chyi Han, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.