The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2010

Filed:

Sep. 17, 2003
Applicants:

Hongqin Shi, San Jose, CA (US);

Gregory P. Schaadt, Santa Clara, CA (US);

Inventors:

Hongqin Shi, San Jose, CA (US);

Gregory P. Schaadt, Santa Clara, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.


Find Patent Forward Citations

Loading…