The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2010

Filed:

Jun. 22, 2006
Applicants:

Alexander Dulkin, Sunnyvale, CA (US);

Anil Vijayendran, San Jose, CA (US);

Tom Yu, Santa Clara, CA (US);

Daniel R. Juliano, Santa Clara, CA (US);

Inventors:

Alexander Dulkin, Sunnyvale, CA (US);

Anil Vijayendran, San Jose, CA (US);

Tom Yu, Santa Clara, CA (US);

Daniel R. Juliano, Santa Clara, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of depositing thin seed layers that improve continuity of the seed layer as well as adhesion to the barrier layer are provided. According to various embodiments, the methods involve performing an etchback operation in the seed deposition chamber prior to depositing the seed layer. The etch step removes barrier layer overhang and/or oxide that has formed on the barrier layer. It some embodiments, a small deposition flux of seed atoms accompanies the sputter etch flux of argon ions, embedding metal atoms into the barrier layer. The embedded metal atoms create nucleation sites for subsequent seed layer deposition, thereby promoting continuous seed layer film growth, film stability and improved seed layer-barrier layer adhesion.


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