The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Jul. 18, 2007
Applicants:
Danny Pak-chum Shum, Poughkeepsie, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
John R. Power, Dresden, DE;
Inventors:
Danny Pak-Chum Shum, Poughkeepsie, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
John R. Power, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a floating gate structure is disclosed, and includes modifying the etch chemistry of a plasma treated reactive ion etch process using an inert atom to physically damage a dielectric region. The damaged dielectric region is subsequently etched using a wet etch process.