The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Oct. 31, 2007
Yu-chuan Liu, Taoyuan County, TW;
Hung-cheng Lin, Taipei County, TW;
Wen-chieh Hsu, Taoyuan County, TW;
Chia-ming Lee, Yilan County, TW;
Jenn-hwa Fu, Chiayi, TW;
Yu-Chuan Liu, Taoyuan County, TW;
Hung-Cheng Lin, Taipei County, TW;
Wen-Chieh Hsu, Taoyuan County, TW;
Chia-Ming Lee, Yilan County, TW;
Jenn-Hwa Fu, Chiayi, TW;
Tekcore Co., Ltd., Nantou, TW;
Abstract
A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.