The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Feb. 06, 2006
Chin-cheng Yang, Hsinchu, TW;
Chih-hao Huang, Hsinchu, TW;
Chin-Cheng Yang, Hsinchu, TW;
Chih-Hao Huang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
The invention is directed to a method for determining an overlay correlation set between two successive patterned material layers on a substrate. The method comprises steps of providing a first material layer having a first overlay mark formed therein over the substrate and then using an exposure tool with a first overlay correlation set to form a patterned photoresist layer on the first material layer, wherein the patterned photoresist layer comprises a mark pattern and the mark pattern is located over the first overlay mark for defining a later formed second material layer on the first material layer to be a second overlay mark. Thereafter, a pre-process metrology overlay parameter set between the first overlay mark and the mark pattern is obtained. The first overlay correlation set at the exposure tool is adjusted according to the pre-process metrology overlay parameter set.