The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Mar. 02, 2007
Takeshi Shibata, Yokohama, JP;
Hiroshi Hashimoto, Moriguchi, JP;
Tadahiko Hirakawa, Nishisonogi-gun, JP;
Kazuhiko Tonari, Susono, JP;
Takeshi Shibata, Yokohama, JP;
Hiroshi Hashimoto, Moriguchi, JP;
Tadahiko Hirakawa, Nishisonogi-gun, JP;
Kazuhiko Tonari, Susono, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
ULVAC, Inc., Kanagawa, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Sony Corporation, Tokyo, JP;
Abstract
An ion implantation apparatus includes an ion irradiation unit. The ion irradiation unit irradiates a plurality of areas of a target substrate with ion beams each of which reaches the substrate at corresponding one incident angle. An incident angle measuring instrument measures the incident angle of each of the ion beams. A controller is provided with information from the incident angle measuring instrument and controls the ion irradiation unit in accordance with the information so that a difference among incident angles is set to within ±0.1°.